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EHT Semi are designed for plasma generation and control. Our pulse generators can be used to improve ion energy distribution control, bias surfaces, and chucking. Our RF generators are designed for direct drive of capacitive and inductive loads, eliminating the need for match boxes in plasma generation and surface bias applications.

If you need help understanding bias waveform tradeoffs, check out our tutorial to see how waveform choice affect the ion energy distribution at the wafer surface.

If our standard products do not meet your application needs, contact us to discuss how they can be modified, or a custom solution can be developed, to meet your specifications.