Perseus™
Perseus redefines precision in wafer biasing with innovative bipolar pulsed power technology. Designed for next-generation fabs, it ensures cleaner profiles, tighter ion energy control, and energy-efficient performance for the most demanding semiconductor processes.
Application: Wafer bias with precision ion energy control
Benefits
- Programmable ion energy distribution leads to higher etch performance
- Manufacture high-aspect-ratio structures and smaller critical dimensions
- Real-time wafer voltage and IED calculated from internal measurements of bias voltage and current
- Active energy recovery minimizes wafer voltage droop, improves efficiency, and enables fast control of ion energy distribution
- Continuously-adjustable multistate operation
- Matching network not required – reduces complexity.
- Perseus™ is an ideal choice for building out new state-of-the-art 300 mm processing facilities or retrofitting older 200 mm systems.
There are Perseus model to meet a range of applications from atomic layer etching and deposition to dielectric high aspect ratio etching.
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Electrical Specifications
Maximum Electrical Specifications
- Output voltage: 0-16 kV
- Waveform type: bipolar
- Peak output current: 110 A
- Max pulse repetition frequency: 600 kHz
- Max average input power: 20 kW
- Peak efficiency: > 80% (load dependent)
Mechanical Specifications
Control and Sensors
Waveform
