Spartan™

Spartan is EHT’s next-generation bias power system engineered for precision ion energy control for low-current bias applications. Designed for simplicity and performance, it empowers fabs to achieve next-generation device features with unmatched control and efficiency.

Application: Wafer Bias

Benefits

Matching network not required – reduces complexity
Improved ion energy distribution control leads to improved etch quality
Fast pulse rise time optimizes wafer on-time (time wafer spends at nonzero voltages)
Retrofit older processing tools to upgrade capabilities

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Electrical Specifications Mechanical Specifications Control and Sensors Waveform

Electrical Specifications

Output voltage: 0-14 kV
Max average input power: 20 kW
Frequency: 80-600 kHz
Peak efficiency: > 80% (load dependent)
Controller: TCP/IP or EtherCat® communication

Mechanical Specifications

Control and Sensors

Controller Options

An optional EHT controller allows for TCP/IP or EtherCAT control. Other industrial protocols can be rapidly developed if needed. Alternatively, the pulse width and pulse repetition frequency can be controlled directly via fiber and an external signal generator.

Output Voltage Control

Output voltage can be adjusted on two timescales. For pulse-to-pulse adjustments, the pulse width can be reduced, which charges the load capacitance to a lower voltage. On longer timescales, the external DC supply set point can be changed.

Internal Sensor Suite

Cooling water flow rate
Cooling water inlet temperature
Cooling water outlet temperature
Internal leak sensor
Component and cold plate threshold temperature
Output voltage (voltage-divided, 1:4000 into a 50 Ω termination; otherwise 1:2000)
Output current (0.5 V/A into 50 Ω terminator)

Waveform