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Plasma Sources & Control Archives - EHT Semi

DOE SBIR Phase I: Independent Electron and Ion Energy Distribution Control for Semiconductor Processing

Plasma etching for producing high aspect ratio (HAR) features is becoming increasingly important as the market demands solid-state non-volatile memory storage. To minimize defects in HAR features and produce higher aspect ratio features, precision and independent control of the ion and electron energy angular distribution functions (IEAD and EEAD) is required. Additionally, HAR etching requires…

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DOE SBIR Phase I/II: Improving Ion Control for Semiconductor Processing with Repetitive Pulsed Power

Abstract The ability to use plasma etching to produce high aspect ratio (HAR) features is becoming increasingly important as the market demands solid-state non-volatile memory storage. In order to minimize bowing and twisting defects in HAR features, precision control of the ion energy distribution function (IEDF) is required. Additionally, HAR etching requires longer processing time,…

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DOE STTR Phase I/II: Low-Impurity, Electrode-less Pre-ionizer Plasma Gun for Innovative Confinement Concepts

Innovative Confinement Concepts (ICC), like the spheromak and the field reversed configuration (FRC), provide an opportunity to study magnetic confinement in geometries other than the tokamak and may provide an alternative path to fusion energy. Many ICCs require a pre-ionizer or plasma injector in order to improve shot-to-shot repeatability. A pre-ionizer must meet several critical…

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